Ultrahigh-Sensitivity and Fast-Speed Solar-Blind Ultraviolet Photodetector Based on a Broken-Gap van der Waals Heterodiode

Ultrasensitive Solar‐Blind Ultraviolet Photodetector Based on FePSe3/MoS2 Heterostructure Response to 10.6 µm

a) Metal−semiconductor (M-S) interface band structure and the change

Vertical Heterostructures of Layered Metal Chalcogenides by van der Waals Epitaxy

a) Schematic diagram of a hybrid Au NPs-MnPSe 3 FET. (b) SEM and

Ultrabroadband and High-Detectivity Photodetector Based on WS2/Ge Heterojunction through Defect Engineering and Interface Passivation

Strain-Engineered van der Waals Interfaces of Mixed-Dimensional Heterostructure Arrays

Polarity-Reversible Te/WSe2 van der Waals Heterodiode for a Logic Rectifier and Polarized Short-Wave Infrared Photodetector

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors - Xie - 2019 - Advanced Functional Materials - Wiley Online Library

Fully depleted vdW heterojunction based high performance photovoltaic photodetector - ScienceDirect

Ultrasensitive Solar‐Blind Ultraviolet Photodetector Based on FePSe3/MoS2 Heterostructure Response to 10.6 µm